Display device

ABSTRACT

A display device is disclosed. In one aspect, the display device includes a substrate including a display area configured to display an image and a peripheral area surrounding the display area. The display device also includes a plurality of signal lines provided in the display area, an encapsulation layer provided over the signal lines and a pad portion provided in the peripheral area. The display device further includes a plurality of connection wires connecting the signal lines and the pad portion, wherein each of the connection wires includes a first portion provided in the peripheral area and a second portion provided in the display area. A portion of the encapsulation layer provided on the display area extends to the peripheral area and placed over the first portions of the connection wires.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.15/299,371, filed Oct. 20, 2016, now U.S. Pat. No. 9,922,909 issued Mar.20, 2018, which claims priority under 35 U.S.C. 119 of Korean PatentApplication No. 10-2015-0148198 filed in the Korean IntellectualProperty Office on Oct. 23, 2015, the disclosures of which areincorporated by reference herein in their entireties.

BACKGROUND

Field

The described technology generally relates to a display device.

Description of the Related Technology

Example types of display devices include a liquid crystal display (LCD),a plasma display panel (PDP), an organic light-emitting diode (OLED)display, a field effect display (FED), an electrophoretic displaydevice, and the like.

Particularly, the OLED of each pixel in the display includes twoelectrodes and an interposed organic emission layer, and emits lightwhile an electron injected from one electrode and a hole injected fromthe other electrode are combined with each other in the organic emissionlayer to form an exciton and the exciton discharges energy.

Since the OLED display is characterized by self-luminance and does notrequire a separate light source, unlike the LCD, its thickness andweight can be reduced. Further, since OLED technology has desirablecharacteristics such as low power consumption, high luminance, and highresponse speed, an OLED display is considered to be a next-generationdisplay technology.

SUMMARY OF CERTAIN INVENTIVE ASPECTS

One inventive aspect relates to a display device that can preventcorrosion of wires provided in a peripheral area of a substrate.

Another aspect is a display device that includes: a substrate includinga display area where an image is displayed and a peripheral area thatneighbors the display area; a plurality of signal lines provided in thedisplay area; an encapsulation layer provided on the plurality of signallines; a pad portion provided in the peripheral area; and a plurality ofconnection wires connecting the signal lines and the pad portion,wherein the encapsulation layer provided on the display area is extendedand is thus provided on the plurality of connection wires.

A folding area may be provided in the peripheral area of the substrate,and the extended encapsulation layer may overlap the folding area.

A protective film may be disposed below the substrate.

The protective film may not be disposed at a lower portion of thefolding area of the substrate.

The substrate may be bent in the folding area, and a support plate maybe provided between ends of the substrate that is folded and thus faceeach other.

An adhesive layer may be provided between the substrate and the supportplate.

Encapsulation layer may be formed of a plurality of layers.

The encapsulation layer may be formed by alternately layering inorganiclayers and organic layers one by one.

The inorganic layer of the encapsulation layer may be extended and isthus disposed on the plurality of connection wires.

The inorganic layer provided on the plurality of connection wires may beformed of at least two or more layers, each having a different density.

The inorganic layer disposed on the plurality of connection wires mayinclude: a pair of first inorganic layers having a first density; and asecond inorganic layer provided between the pair of first inorganiclayers and having a second density.

The inorganic layer may be made of at least one of a silicon oxide, asilicon nitride, and a silicon oxynitride.

The encapsulation layer may include: inorganic layers and organic layersthat are alternately layered one by one; and a metal oxide layerprovided between the inorganic layer and the organic layer, as thetopmost layer of the encapsulation layer or as the bottommost layer ofthe encapsulation layer.

The metal oxide layer may be extended and is thus disposed on theplurality of connection wires.

The metal oxide layer may be made of at least one of aluminum oxide,ITO, zinc oxide, and titanium oxide.

The encapsulation layer may include: inorganic layers and organic layersthat are alternately layered one by one; and a hexamethyldisiloxane(HMDSO) layer provided between the inorganic layer and the organiclayer, as the topmost layer of the encapsulation layer or as thebottommost layer of the encapsulation layer.

The HMDSO layer may be extended and is thus being disposed on theplurality of connection wires.

The display device may further include a chip-on-film combined to thepad portion.

Another aspect is a display device comprising: a substrate including adisplay area configured to display an image and a peripheral areasurrounding the display area; a plurality of signal lines provided inthe display area; an encapsulation layer provided over the signal lines;a pad portion provided in the peripheral area; and a plurality ofconnection wires connecting the signal lines and the pad portion,wherein each of the connection wires includes a first portion providedin the peripheral area and a second portion provided in the displayarea, wherein a portion of the encapsulation layer provided on thedisplay area extends to the peripheral area and placed over the firstportions of the connection wires.

In the above display device, the peripheral area includes a foldingarea, and wherein the extended portion of the encapsulation layeroverlaps the folding area in the depth dimension of the display device.The above display device further comprises a protective film disposedbelow the substrate. In the above display device, the protective film isnot disposed at a lower portion of the folding area of the substrate. Inthe above display device, ends of the substrate are configured to befolded and face each other, and wherein the display device furthercomprises a support plate provided between the ends of the substrate.The above display device further comprises an adhesive layer providedbetween the substrate and the support plate. In the above displaydevice, the encapsulation layer includes a plurality of layers. In theabove display device, the layers include a plurality of inorganic layersand a plurality of organic layers that are alternately formed.

In the above display device, at least one of the inorganic layersextends to the peripheral area so as to be disposed over the connectionwires. In the above display device, the inorganic layers have differentdensities. In the above display device, the inorganic layers comprise: apair of first inorganic layers having a first density; and a secondinorganic layer provided between the first inorganic layers and having asecond density. In the above display device, each of the inorganiclayers is made of at least one of a silicon oxide, a silicon nitride,and a silicon oxynitride. In the above display device, the encapsulationlayer comprises: a plurality of inorganic layers and a plurality oforganic layers that are alternately formed; and a metal oxide layerprovided between the inorganic layers and the organic layers, as thetopmost layer of the encapsulation layer or as the bottommost layer ofthe encapsulation layer.

In the above display device, the metal oxide layer extends to theperipheral area so as to be disposed over the connection wires. In theabove display device, the metal oxide layer is made of at least one ofaluminum oxide, ITO, zinc oxide, and titanium oxide. In the abovedisplay device, the encapsulation layer comprises: a plurality ofinorganic layers and a plurality of organic layers that are alternatelyformed; and a hexamethyldisiloxane (HMDSO) layer provided between theinorganic layers and the organic layers, as the topmost layer of theencapsulation layer or as the bottommost layer of the encapsulationlayer. In the above display device, the HMDSO layer extends to theperipheral area so as to be disposed over the connection wires. Theabove display device further comprises a chip-on-film combined to thepad portion.

Another aspect is a display device comprising: a substrate including adisplay area configured to display an image and a peripheral areasurrounding the display area; a plurality of signal lines provided inthe display area; an encapsulation layer provided over the signal lines;a pad portion provided in the peripheral area; and a plurality ofconnection wires connecting the signal lines and the pad portion,wherein each of the connection wires includes a first portion providedin the peripheral area and a second portion provided in the displayarea, wherein the encapsulation layer is disposed over the first andsecond portions of the connection wires.

In the above display device, the encapsulation layer comprises a bottomlayer, a top layer and an intermediate layer interposed between the topand bottom layers, wherein the bottom layer is closer to the substratethan the top layer, wherein one of the top and bottom layers is disposedboth in the display area and the peripheral area, and wherein theintermediate layer and the other of the top and bottom layers aredisposed only in the display area.

According to at least one of the disclosed embodiments, corrosion ofwires disposed in the peripheral area of the substrate due to moistureor salt water from a user's hand can be prevented.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a top plan view of a display device according to an exemplaryembodiment.

FIG. 2 is a cross-sectional view of FIG. 1, taken along the line II-II.

FIG. 3 shows a substrate of FIG. 2 in a bent state.

FIG. 4 is an enlarged cross-sectional view of a single pixel of FIG. 1.

FIG. 5 is a cross-sectional view of a display device according toanother exemplary embodiment.

FIG. 6 shows a substrate of FIG. 5 in a bent state.

FIG. 7 is a cross-sectional view of an encapsulation layer according tothe present exemplary embodiment.

FIG. 8 shows a first exemplary variation of the encapsulation layer ofthe present exemplary embodiment.

FIG. 9 shows a second exemplary variation of the encapsulation layer ofthe present exemplary embodiment.

DETAILED DESCRIPTION OF CERTAIN INVENTIVE EMBODIMENTS

In an OLED display, one side of a substrate to which a chip-on-film andthe like is attached in a bent state. Such a bent area is disposed at anedge of the display device and contacts a user's hand. In this case,moisture or perspiration on the user's hand may permeate into thedisplay device, thereby causing corrosion of wires in the bent area.

Embodiments will be described more fully hereinafter with reference tothe accompanying drawings. As those skilled in the art would realize,the described embodiments may be modified in various different ways, allwithout departing from the spirit or scope of the present invention. Thedrawings and description are to be regarded as illustrative in natureand not restrictive. Like reference numerals designate like elementsthroughout the specification.

In addition, the size and thickness of each configuration shown in thedrawings are arbitrarily shown for better understanding and ease ofdescription, but the present invention is not limited thereto.

In the drawings, the thickness of layers, films, panels, regions, etc.,are exaggerated for clarity. In the drawings, for better understandingand ease of description, the thickness of some layers and areas isexaggerated. It will be understood that when an element such as a layer,film, region, or substrate is referred to as being “on” another element,it can be directly on the other element or intervening elements may alsobe present.

In this disclosure, the term “substantially” includes the meanings ofcompletely, almost completely or to any significant degree under someapplications and in accordance with those skilled in the art. Moreover,“formed, disposed over positioned over” can also mean “formed, disposedor positioned on.” The term “connected” includes an electricalconnection.

FIG. 1 is a top plan view of a display device 100 according to anexemplary embodiment, FIG. 2 is a cross-sectional view of FIG. 1, takenalong the line II-II, and FIG. 3 shows a substrate of FIG. 2 in a bentstate.

Referring to FIG. 1 to FIG. 3, the display device 100 includes asubstrate 211, a plurality of connection wires 213, an encapsulationlayer 400, and a pad portion PAD.

In some embodiments, a portion of the encapsulation layer 400 providedin a display area DA extends to a peripheral area PA, and the extendedencapsulation layer 400 covers the connection wires 213 formed in theperipheral area PA. The extended encapsulation layer 400 preventscorrosion of the connection wires 213 provided therebelow.

Referring to FIG. 1 and FIG. 2, the substrate 211 is divided into thedisplay area DA configured to display an image and the peripheral areaPA that neighbors or surrounds the display area DA. The display area DAincludes a plurality of pixels P that emit light. The peripheral area PAincludes a plurality of connection wires 213 configured to drive thepixels P, a pad portion PAD, and a chip-on-film 300.

The connection wires 213 are provided in the peripheral area PA of thesubstrate 211. The connection wires 213 connect a plurality of signallines such as a data line (not shown), a scan line (not shown), and thelike formed in the display area DA to the pad portion PAD. In thepresent exemplary embodiment, the connection wires 213 correspond to afan-out portion that connects a gate line or a data line with a gate ICor a data IC.

In this case, a buffer layer 212 is provided between the substrate 211and the connection wires 213. The buffer layer 212 serves to preventpermeation of impurity elements and planarize the surface thereof. Thebuffer layer 212 may be the same layer as a substrate buffer layer 126provided on a substrate 123 of FIG. 4.

A wire insulation layer 214 is provided on the connection wires 213. Thewire insulation layer 214 partially exposes the connection wires 213 inthe pad portion PAD. In this case, the exposed portion of the connectionwires 213 may be connected with the chip-on-film 300.

The wire insulation layer 214 may be formed of an acryl-based resin, anepoxy resin, a phenolic resin, a polyamide resin, a polyimide resin, anunsaturated polyester resin, a polyphenylene resin, a polyphenylenesulfide resin, benzocyclobutene (BCB), a silicon nitride (SiNx), or asilicon oxide (SiOx). However, the wire insulation layer 214 may beomitted, and the encapsulation layer 400 may be provided on theconnection wires 213.

The chip-on-film 300 is disposed on the pad portion PAD formed by theexposed portion of the connection wires 213, and is electricallyconnected with the connection wires 213. A driving chip (not shown) usedfor driving of the pixels P may be installed in the chip-on-film 300.

In this case, the chip-on-film 300 may be provided as a plurality ofmetal wires (not shown) on a base film (not shown) having flexibility.

The driving chip may be installed in the base film to generate a drivingsignal. For example, the driving ship may be a scan driving circuit thatgenerates a scan signal by receiving an external control signal, or adata driving circuit that generates a data signal by receiving anexternal control signal.

According to the present exemplary embodiment, the encapsulation layer400 is provided on the wire insulation layer 214. As discussed above, aportion of the encapsulation layer 400 provided in the pixel PX of thedisplay area DA extends to the peripheral area PA. The encapsulationlayer 400 protects an OLED and a pixel driver in the pixel PX of thedisplay area DA by sealing them.

In the present exemplary embodiment, the extended portion of theencapsulation layer 400 is disposed on the connection wires 213.

Referring to FIG. 3, the peripheral area PA of the substrate 211 may bedisposed in the display device while being bent with respect to afolding area or bendable area BA. One end of the substrate 211 combinedwith the chip-on-film 300 is folded and thus ends of the substrate 211face each other as shown in FIG. 3.

A portion of the encapsulation layer 400, for example, a portion of themetal oxide layer 411, may overlap the folding area BA, thus beingfolded together with the connection wires 213.

In some embodiments, as shown in FIG. 7, the encapsulation layer 400 isprovided as a plurality of layers in the display area DA. Theencapsulation layer 400 can be formed by alternately layering a metaloxide layer 411, organic layers 421 and 441, and inorganic layers 431and 451. That is, the organic layers 421 and 441 and the inorganiclayers 431 and 451 are alternately layered on the metal oxide layer 411.

The metal oxide layer 411 is disposed in the bottommost layer of theencapsulation layer 400 in the present exemplary embodiment, but themetal oxide layer 411 may be disposed in the topmost layer of theencapsulation layer 400. Alternatively, the metal oxide layer 411 may bedisposed between the alternately layered organic layers 421 and 441 andthe inorganic layers 431 and 451.

Referring back to FIG. 2, the metal oxide layer 411 among theencapsulation layers 400 formed of a plurality of layers extends fromthe display area DA and is thus formed in the peripheral area PA in thepresent exemplary embodiment. That is, the metal oxide layer 411 mayextend and thus be provided on the wire insulation layer 214 of theperipheral area PA.

In this case, the metal oxide layer 411 may be made of at least one ofan aluminum oxide (AlOx), indium tin oxide (ITO), zinc oxide (ZnO), anda titanium oxide (TiOx). However, a material of the metal oxide layer411 is not limited thereto, and a known material used in a thin filmencapsulation may be used.

Further, a passivation layer 215 may be provided on the metal oxidelayer 411 in the peripheral area PA. The passivation layer 215 canprevent corrosion of the plurality of connection wires 213 providedtherebelow by preventing permeation of moisture.

Referring to FIG. 1 and FIG. 3, the folding area BA is disposed at anedge of the display device 100. Accordingly, when the user holds thedisplay device 100, the folding area BA may be adjacent to the user'shand.

In this case, moisture, salt water, and the like from the user's handmay permeate into the folding area BA. Conventionally (not necessarilyprior art), when a part of the encapsulation layer 400 is not disposedin the folding area BA, the connection wires 213 may corrode due to themoisture or salt water.

However, in the present exemplary embodiment, a part of theencapsulation layer 400 is disposed on the connection wires 213 suchthat permeation of moisture, salt water, and the like can be prevented.

That is, in the present exemplary embodiment, the metal oxide layer 411among the encapsulation layer 40 extends to the peripheral area PA suchthat corrosion of the connection wires 213 due to moisture, salt water,and the like can be prevented.

Further, the metal oxide layer 411 may be formed in the peripheral areaPA at the same time as the encapsulation layer 400 of the display areaDA is formed. Thus, neither an additional mask process nor an additionaldeposition process is necessary. Accordingly, processing time andmanufacturing cost can be saved.

The pixels P are disposed in the display area DA. In the followingdescription, a single pixel P will be described in detail with referenceto FIG. 4. In the present exemplary embodiment, each pixel P may beformed of an organic light-emitting element.

Referring to FIG. 4, the substrate 123 may be made of an inorganicmaterial such as glass, a metal material, or an organic material such asa resin. The substrate 123 may have a light transmissive characteristicor a light blocking characteristic. The substrate 123 may be made of thesame layer as the substrate 211 of FIG. 2 and FIG. 3.

In addition, the substrate buffer layer 126 is provided on the substrate123. The substrate buffer layer 126 serves to prevent permeation ofimpurity elements and planarize the surface thereof.

The substrate buffer layer 126 may be made of various materials that canperform the above-stated functions. For example, the substrate bufferlayer 126 may be formed as one of a silicon nitride (SiNx) layer, asilicon oxide (SiOx) layer, and a silicon oxynitride (SiOxNy) layer.However, the substrate buffer layer 126 is not a requisite element, andmay be omitted depending on the type and a process condition of thesubstrate 123.

A driving semiconductor layer 137 is provided on the substrate bufferlayer 126. The driving semiconductor layer 137 is formed as apolysilicon layer. Further, the driving semiconductor layer 137 includesa channel region 135 in which impurities are not doped, and a sourceregion 134 and a drain region 136 in which impurities are doped atrespective sides of the channel region 135. In this case, the doped ionmaterials are P-type impurities such as boron (B), and B₂H₆ is mainlyused. The impurities vary according to a kind of thin film transistor.

A gate insulating layer 127 made of a silicon nitride (SiNx) or asilicon oxide (SiOx) is provided on the driving semiconductor layer 137.

A gate wire including a driving gate electrode 133 is provided on thegate insulating layer 127.In addition, the driving gate electrode 133 isformed to overlap at least a part of the driving semiconductor layer137, particularly, the channel region 135.

Meanwhile, an interlayer insulating layer 128 covering the driving gateelectrode 133 is formed on the gate insulating layer 127. Contact holes128 a exposing the source region 134 and the drain region 136 of thedriving semiconductor layer 137 are formed in the gate insulating layer127 and the interlayer insulating layer 128.

The interlayer insulating layer 128 may be formed by using aceramic-based material such as a silicon nitride (SiNx) or a siliconoxide (SiOx), like the gate insulating layer 127.

In addition, a data wire including a driving source electrode 131 and adriving drain electrode 132 is provided on the interlayer insulatinglayer 128. Further, the driving source electrode 131 and the drivingdrain electrode 132 are connected with the source region 134 and thedrain region 136 of the driving semiconductor layer 137 through thecontact holes 128 a formed in the interlayer insulating layer 128 andthe gate insulating layer 127, respectively.

As such, a driving thin film transistor 130 including the drivingsemiconductor layer 137, the driving gate electrode 133, the drivingsource electrode 131, and the driving drain electrode 132 is formed. Theconfiguration of the driving thin film transistor 130 is not limited tothe aforementioned example, and may be variously modified as a knownconfiguration which may be easily implemented by those skilled in theart.

In addition, a planarization layer 124 covering the data wire isprovided on the interlayer insulating layer 128. The planarization layer124 serves to remove and planarize a step in order to increase emissionefficiency of the organic light-emitting element to be formed thereon.Further, the planarization layer 124 has an electrode via hole 122 aexposing a part of the drain electrode 132.

The planarization layer 124 may be made of one or more materials of apolyacrylate resin, an epoxy resin, a phenolic resin, a polyamide resin,a polyimide resin, an unsaturated polyester resin, a polyphenylene etherresin, a polyphenylene sulfide resin, and benzocyclobutene (BCB).

Here, the described technology is not limited to the aforementionedstructure, and in some cases, one of the planarization layer 124 and theinterlayer insulating layer 128 may be omitted.

In this case, a first electrode of the organic light-emitting element,that is, a pixel electrode 160, is formed on the planarization layer124. That is, the OLED display includes a plurality of pixel electrodes160 which are disposed for every plurality of pixels, respectively. Inthis case, the pixel electrodes 160 are disposed separately from eachother. The pixel electrode 160 is connected to the driving drainelectrode 132 through the electrode via hole 122 a of the planarizationlayer 124.

Further, a pixel defining layer 125 having an opening exposing the pixelelectrode 160 is formed on the planarization layer 124. That is, thepixel defining layer 125 has a plurality of openings formed for eachpixel.

In this case, an organic emission layer 170 may be formed for eachopening formed by the pixel defining layer 125. Accordingly, a pixelarea where each organic emission layer is formed may be defined by thepixel defining layer 125.

In this case, the pixel electrode 160 is disposed to correspond to theopening of the pixel defining layer. However, the pixel electrode 160 isnot only disposed in the opening of the pixel defining layer 125, andmay be disposed below the pixel defining layer 125 so that a part of thepixel electrode 160 overlaps with the pixel defining layer 125.

The pixel defining layer 125 may be made of a resin such as apolyacrylate resin and a polyimide resin, a silica-based inorganicmaterial, or the like.

The organic emission layer 170 is formed on the pixel electrode 160.

In addition, a second electrode, that is, a common electrode 180, may beformed on the organic emission layer 170. As such, the OLED includingthe pixel electrode 160, the organic emission layer 170, and the commonelectrode 180 is formed.

Each of the pixel electrode 160 and the common electrode 180 may be madeof a transparent conductive material or a transflective or reflectiveconductive material. According to kinds of materials forming the pixelelectrode 160 and the common electrode 180, the OLED display may be atop emission type, a bottom emission type, or a double-sided emissiontype.

Meanwhile, an overcoat 190 covering and protecting the common electrode180 may be formed as an organic layer on the common electrode 180.

In addition, an encapsulation layer 140 is provided on the overcoat 190.The encapsulation layer 140 encapsulates and protects the OLED and apixel driver provided in the substrate 123 from the outside. Theencapsulation layer 140 is formed the same as the encapsulation layer400 of FIG. 2 and FIG. 3.

The encapsulation layer 140 includes organic encapsulation layers 140 aand 140 c and inorganic encapsulation layers 140 b and 140 d that arealternately layered. In FIG. 4, for example, a case where two organicencapsulation layers 140 a and 140 c and two inorganic encapsulationlayers 140 b and 140 d are alternately laminated to configure the thinfilm encapsulation layer 140 is illustrated, but it is not limitedthereto. As described above, the metal oxide layer 411 may be providedbelow the organic encapsulation layer 140 a among the encapsulationlayer 140.

Hereinafter, referring to FIG. 8 and FIG. 9, first to third exemplaryvariations of the encapsulation layer of the display device according tothe exemplary embodiment will be described. In the description of thefirst to third exemplary variations, a detailed description with respectto configurations that are the same as the above-described exemplaryembodiment will be omitted.

FIG. 8 shows a first exemplary variation of the encapsulation layeraccording to the present exemplary embodiment, and FIG. 9 shows a secondexemplary variation of the encapsulation layer according to the presentexemplary embodiment.

Referring to FIG. 8, in the first exemplary variation, an encapsulationlayer 402 is formed by alternately layering an organic layer and aninorganic layer in a display area DA, and one of the inorganic layers(see 412) extends to a peripheral area PA. That is, in the presentexemplary variation, an inorganic layer provided between organic layers,the upper most inorganic layer, or the bottommost inorganic layer isextended to the peripheral area PA.

More specifically, each of organic layers 422 and 442 and each ofinorganic layers 432 and 452 are alternately layered, and an inorganiclayer 412 is disposed in a lower portion of the organic layer 422, thatis, the inorganic layer 412 is disposed as the bottommost layer.

The bottommost inorganic layer 412 is extended to the peripheral areaPA. That is, the inorganic layer 412 is extended and is thus disposed ona wire insulation layer 214 of the peripheral area PA. In this case, theinorganic layer may include at least one of a silicon oxide (SiOx), asilicon nitride (SiNx), and a silicon oxynitride (SiON).

Referring to FIG. 9, in the second exemplary variation, an encapsulationlayer 403 is formed by alternately layering an organic layer and aninorganic layer in a display area DA, and one of the inorganic layers isextended to a peripheral area PA. That is, in the present exemplaryvariation, an inorganic layer provided between organic layers, the uppermost inorganic layer, or the bottommost inorganic layer is extended tothe peripheral area PA. In this case, the inorganic layer may be formedof at least two or more layers, each having a different density.

More specifically, in the second exemplary variation, organic layers 422and 442 and inorganic layers 432 and 452 are alternately layered one byone, and an inorganic layer 413 formed as layers respectively havingdifferent density is disposed in a lower portion of the organic layer422, that is, the bottommost layer. The inorganic layer 413 may beextended to the peripheral area PA.

In the second exemplary variation, the inorganic layer 413 may be formedof a pair of first inorganic layers 413 a and 413 c, each having a firstdensity, and a second inorganic layer 413 b provided between the pair offirst inorganic layers 413 a and 413 c. In this case, the secondinorganic layer 413 b has a second density that is different from thefirst density of the first inorganic layer 413 a and 413 c.

For example, the pair of first inorganic layers 413 a and 413 c may havea density of 1.8 g/cm³, and the second inorganic layer 413 b may have adensity of 3.0 g/cm³. In this case, the first inorganic layer 413 a maybe made of a silicon oxide (SiOx), the first inorganic layer 413 c maybe made of a silicon nitride (SiNx), and the second inorganic layer 413b may be made of a silicon oxynitride (SiON).

Meanwhile, according to the third exemplary variation, an encapsulationlayer 400 is formed by alternately layering a hexamethyldisiloxane(HMDSO) layer (not shown), organic layers 421 and 441, and inorganiclayers 431 and 451. That is, the organic layers 421 and 441 and theinorganic layers 431 and 451 are alternately layered one by one on theHMDSO layer (not shown).

However, in the present exemplary embodiment, the HMDSO layer isdisposed as the bottommost layer of the encapsulation layer 400, butthis is not restrictive. The HDMSO layer may be provided as the topmostlayer of the encapsulation layer 400. Alternatively, the HMDSO layer(not shown) may be disposed between the alternately layered organiclayers 421 and 441 and inorganic layers 431 and 451.

Among the encapsulation layer 400 formed of a plurality of layers, theHMDSO layer (not shown) is extended from the display area DA and is thusformed in the peripheral area PA. That is, the HMDSO layer (not shown)is extended and thus provided on a wire insulation layer 214 of theperipheral area PA. The third exemplary variation is different from theexemplary embodiment of FIG. 2 and FIG. 3 in that the HDMSO layer (notshown) is disposed instead of the metal oxide layer 411.

The HMDSO layer serves to absorb stress of the encapsulation layer 400to provide flexibility. The HMDSO layer is essentially an inorganiclayer, but has a flexible characteristic like an organic layer. Thus,the HMDSO layer can effectively absorb the stress of the encapsulationlayer 400 with flexibility like an organic layer, and at the same timeit may be deposited in a chamber where the inorganic layer 431 and 451of the encapsulation layer 400 are formed since the HDMSO layer isessentially an inorganic layer.

Hereinafter, a display device according to another exemplary embodimentwill be described with reference to FIG. 5 and FIG. 6. Like referencenumerals refer to constituent elements that are identical to those ofthe aforementioned exemplary embodiment.

FIG. 5 is a cross-sectional view of a display device according toanother exemplary embodiment, and FIG. 6 shows a substrate of FIG. 5 ina bent state.

Referring to FIG. 5 and FIG. 6, a protective film 310 is disposed belowthe substrate 211. In this case, the protective film 310 may preventpermeation of moisture and the like to the substrate 211 or preventdamage to the substrate 211 due to an external impact.

The protective film 310 is not disposed below a folding area BA. Thatis, the protective film 310 may be disposed below the substrate 211,except at the lower portion of the folding area BA. However, theprotective film 310 may be provided only in the peripheral area PA ormay be provided in the peripheral area PA and the display area DA.

A support plate 500 is provided between the ends of the substrate 211that is bent and thus they face each other. The support plate 500maintains the ends of the substrate 211 to face each other while lateralends of the substrate 211 to which a chip-on-film 300 is attached arebeing folded.

In the present exemplary embodiment, an adhesive layer 320 is providedbetween the support plate 500 and the substrate 211, and thus thesubstrate 211 where the chip-on-film 300 is attached is fixed to thesupport plate 500. Accordingly, the substrate 211 can maintain thefolded state.

The display device according to the exemplary embodiment, a portion ofan encapsulation layer 400 provided in a pixel P of the display area DAextends to the peripheral area PA such that corrosion of a plurality ofconnection wires 213 provided below the encapsulation layer 400 can beprevented. Further, the encapsulation layer 400 can be formedsimultaneously with an encapsulation layer of the display area DA suchthat manufacturing time and manufacturing cost can be saved.

While the inventive technology has been described in connection withwhat is presently considered to be practical exemplary embodiments, itis to be understood that the invention is not limited to the disclosedembodiments, but, on the contrary, is intended to cover variousmodifications and equivalent arrangements included within the spirit andscope of the appended claims.

What is claimed is:
 1. A display device comprising: a substrateincluding a display area configured to display an image and a peripheralarea surrounding the display area; a plurality of signal linesoverlapping the display area; an encapsulation layer overlapping theplurality of signal lines; a pad portion overlapping the peripheralarea; and a plurality of connection wires connecting the signal linesand the pad portion, wherein each of the connection wires includes afirst portion provided in the peripheral area and a second portionprovided in the display area, and wherein the encapsulation layer isdisposed over the first and second portions of the connection wires. 2.The display device of claim 1, wherein the encapsulation layer comprisesa bottom layer, a top layer and an intermediate layer interposed betweenthe top and bottom layers, wherein the bottom layer is closer to thesubstrate than the top layer, wherein one of the top and bottom layersis disposed both in the display area and the peripheral area, andwherein the intermediate layer and the other of the top and bottomlayers are disposed only in the display area.
 3. A display devicecomprising: a substrate including a display area and a peripheral areasurrounding the display area; a plurality of signal lines overlappingthe display area; an encapsulation layer overlapping the plurality ofsignal lines; and a plurality of connection wires connected to theplurality of signal lines and overlapping the peripheral area, whereinthe encapsulation layer overlapping the display area extends to theperipheral area and overlaps the plurality of connection wires.
 4. Thedisplay device of claim 3, further comprising a chip-on-film combined tothe pad portion.
 5. The display device of claim 3, wherein theencapsulation layer comprises: a plurality of inorganic layers and aplurality of organic layers that are alternately formed; and ahexamethyldisiloxane (HMDSO) layer provided between the inorganic layersand the organic layers, as the topmost layer of the encapsulation layeror as the bottommost layer of the encapsulation layer.
 6. The displaydevice of claim 5, wherein the HMDSO layer extends to the peripheralarea so as to be disposed over the connection wires.
 7. The displaydevice of claim 3, wherein the encapsulation layer comprises: aplurality of inorganic layers and a plurality of organic layers that arealternately formed; and a metal oxide layer provided between theinorganic layers and the organic layers, as the topmost layer of theencapsulation layer or as the bottommost layer of the encapsulationlayer.
 8. The display device of claim 7, wherein the metal oxide layeris made of at least one of aluminum oxide, ITO, zinc oxide, and titaniumoxide.
 9. The display device of claim 7, wherein the metal oxide layerextends to the peripheral area so as to be disposed over the connectionwires.
 10. The display device of claim 3, wherein the peripheral areaincludes a folding area, and wherein the extended portion of theencapsulation layer overlaps the folding area in the depth dimension ofthe display device.
 11. The display device of claim 10, furthercomprising a protective film disposed below the substrate.
 12. Thedisplay device of claim 11, wherein the protective film is not disposedat a lower portion of the folding area of the substrate.
 13. The displaydevice of claim 12, wherein ends of the substrate are configured to befolded and face each other, and wherein the display device furthercomprises a support plate provided between the ends of the substrate.14. The display device of claim 13, further comprising an adhesive layerprovided between the substrate and the support plate.
 15. The displaydevice of claim 3, wherein the encapsulation layer includes a pluralityof inorganic layers and a plurality of organic layers that arealternately disposed.
 16. The display device of claim 15, wherein eachof the inorganic layers is made of at least one of a silicon oxide, asilicon nitride, and a silicon oxynitride.
 17. The display device ofclaim 15, wherein at least one of the plurality of inorganic layersextends to the peripheral area so as to be disposed over the connectionwires.
 18. The display device of claim 17, wherein the at least one ofthe inorganic layers includes at least two or more layers havingdifferent densities.
 19. The display device of claim 17, wherein theinorganic layers comprise: a pair of first inorganic layers having afirst density; and a second inorganic layer provided between the firstinorganic layers and having a second density.